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The influence of the ambient and junction temperature on the MPS critical parameters

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2 Author(s)
Hapka, A. ; Koszalin Univ. of Technol., Koszalin, Poland ; Janke, W.

The measurements and simulations of isothermal and non-isothermal DC characteristics of SiC Schottky barrier diodes are presented in this paper. Various electro-thermal models for I-V characteristics calculation are proposed. The calculations of non-isothermal characteristics of SiC SBD's in the wide range of forward voltage are shown. The self-heating phenomenon, as an electro thermal positive feedback is discussed. The critical current and junction temperature estimation for SiC SBD is explained.

Published in:

Thermal Investigations of ICs and Systems (THERMINIC), 2011 17th International Workshop on

Date of Conference:

27-29 Sept. 2011