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Cu-Cu thermocompression bonding has become an important technology for 3D packaging and integration. In this paper, a novel low temperature thermocompression bonding technology using nanostructure Cu layer was presented. By selective dealloying of Cu-Zn alloy in dilute hydrochloric acid, porous nanostructure Cu layer was fabricated on silicon substrate. Scanning electron microscopy (SEM) and X-ray fluorescence (XRF) analysis revealed that the dealloying time strongly influenced the nanostructure. Low temperature thermocompression bonding at 280°C was achieved using the nanostructure Cu layer with no void and bonding interface, bonding strength test showed promising properties compared with that of flat Cu layer.
Published in:
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Date of Conference: 8-11 Aug. 2011
- Page(s):
- 1 - 4
- E-ISBN :
- 978-1-4577-1768-0
- Print ISBN:
- 978-1-4577-1770-3
- INSPEC Accession Number:
- 12345798
- Conference Location :
- Shanghai
- Digital Object Identifier :
- 10.1109/ICEPT.2011.6066789
- Product Type:
- Conference Publications
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