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TiAl-based ohmic contacts on p-type SiC

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5 Author(s)
Marcin Mysliwiec ; Institute of Micro- and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75 00-662, Poland ; Mariusz Sochacki ; Ryszard Kisiel ; Marek Guziewicz
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Titanium-aluminum alloys were successfully used to form low resistance ohmic contacts to p-type SiC. This work concerns two Al-Ti alloy compositions. Contacts were prepared by magnetron sputtering of bilayer Al-Ti and trilayer Ti-Al-Ti thin films and rapid thermal annealing at temperatures range 900°C ÷ 1000°C. Using scanning electron microscopy and profiler, an investigation of surface morphology of annealed contacts was conducted. The best resistivity of 5.8·10-5 Ωcm2 was attained on 100nm/26nm Al/Ti metallization of 80% at. Al alloy composition annealed at 1000°C for 2 min. Relatively low roughness of 30 nm was observed on trilayer Ti/Al/Ti metallization.

Published in:

Proceedings of the 2011 34th International Spring Seminar on Electronics Technology (ISSE)

Date of Conference:

11-15 May 2011