Referenced Items are not available for this document.
This paper presents a silicon oscillator suitable for low-cost and low-power wireless sensing applications. With the comparisons of ring oscillators in different temperature coefficients, the frequency of an internal ring oscillator is estimated and parameterized by a second-order polynomial. Accordingly, the output clock is compensated in a frequency division fashion. The oscillator is implemented in 90-nm CMOS technology with an area of 0.04mm2. Operating at 0.6V, the output frequency is within 200±1kHz over the temperature range of Ȓ25°C to 125°C with power consumption of 48μW.
Published in:
Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on
Date of Conference: 7-10 Aug. 2011
- Page(s):
- 1 - 4
- ISSN :
- 1548-3746
- E-ISBN :
- 978-1-61284-855-6
- Print ISBN:
- 978-1-61284-856-3
- INSPEC Accession Number:
- 12269430
- Conference Location :
- Seoul
- Digital Object Identifier :
- 10.1109/MWSCAS.2011.6026284
- Product Type:
- Conference Publications
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