Referenced Items are not available for this document.
Low-voltage MOSFETs are widely used in the synchronous rectifying stages of power supplies. To allow a high efficiency in light-load conditions, the power MOSFET not only needs to meet general requirements like low on-resistance, low gate charge and good avalanche capability, but must also have a low output capacitance and low reverse-recovery charge. The paper shows how those requirements were met in our newest generation of power MOSFET starting with the 60 V class.
Published in:
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Date of Conference: Aug. 30 2011-Sept. 1 2011
- Page(s):
- 1 - 10
- E-ISBN :
- 978-90-75815-15-3
- Print ISBN:
- 978-1-61284-167-0
- INSPEC Accession Number:
- 12267791
- Conference Location :
- Birmingham
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
