A comprehensive physics-based power MOSFET model in VHDL-AMS for circuit simulations

This paper presents a comprehensive Power MOSFET model for system and circuit simulation and its implementation in VHDL-AMS. The equation set features a non-quasi-static description of the body diode, a charge model for the inner MOSFET, self-heating and the inclusion of major parasitics. A comparison between simulation and measurement proves the good quality obtained.