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Effects of TMAH Treatment on Device Performance of Normally Off \hbox {Al}_{2}\hbox {O}_{3}/\hbox {GaN} MOSFET

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9 Author(s)
Ki-Won Kim ; Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea ; Sung-Dal Jung ; Dong-Seok Kim ; Hee-Sung Kang
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Normally off Al2O3/GaN MOSFETs are fabricated by utilizing a simple tetramethylammonium hydroxide (TMAH) treatment as a postgate-recess process. The TMAH-treated device with a gate length of 2.5 μm exhibited excellent device performances, such as a threshold voltage of 3.5 V, a maximum drain current of 336 mA/mm, and a breakdown voltage of 725 V, along with extremely small gate leakage current of about 10-9 A/mm at Vgs = 15 V, which is approximately six orders lower in magnitude compared to that of the device without TMAH treatment.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 10 )