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The n-type nonstoichiometric Pb0.55Te0.45 materials were prepared by melting and quenching combined with a subsequent high pressure high temperature (HPHT) treatment. After adequately annealed at 623 K in the argon atmosphere, the thermoelectric transport properties of the prepared samples have been systematically investigated. The results show that the pressure effectively adjusts the carrier concentration and its transport properties, and hence commendably tunes thermoelectric performances of the samples. Therefore, the maximum ZT of the sample treated by 2 GPa reaches 0.84 at 580 K, which is ~ 400% improvement in comparison with the melting ingot.
Date of Conference: 8-10 Aug. 2011