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Notice of Retraction
After careful and considered review of the content of this paper by a duly constituted expert committee, this paper has been found to be in violation of IEEE's Publication Principles.
We hereby retract the content of this paper. Reasonable effort should be made to remove all past references to this paper.
The presenting author of this paper has the option to appeal this decision by contacting TPII@ieee.org.
The n-type nonstoichiometric Pb0.55Te0.45 materials were prepared by melting and quenching combined with a subsequent high pressure high temperature (HPHT) treatment. After adequately annealed at 623 K in the argon atmosphere, the thermoelectric transport properties of the prepared samples have been systematically investigated. The results show that the pressure effectively adjusts the carrier concentration and its transport properties, and hence commendably tunes thermoelectric performances of the samples. Therefore, the maximum ZT of the sample treated by 2 GPa reaches 0.84 at 580 K, which is ~ 400% improvement in comparison with the melting ingot.