By Topic

Characterization of all-metallic field emitter arrays in combined diode-RF cavity electron gun

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Tsujino, S. ; Dept. of Synchrotron Radiat. & Nanotechnol., Paul Scherrer Inst., Villigen, Switzerland ; Kirk, E. ; Paraliev, M. ; Gough, C.
more authors

Recently, nanosecond electrical switching and high-acceleration-field compatibility of single-gate all-metallic field-emitter arrays (FEAs) fabricated by molding and a self-aligned gate process were reported along with the emittance measurement. Here we present further optimization of the FEA driver and successful reduction of emission current pulse below ~0.5 ns, up to 5 MeV acceleration of field emission beams by post-acceleration of 200 keV pulses using a 1.5 GHz RF cavity of the combined diode-RF cavity electron gun of the SwissFEL gun test facility. In addition, evolution of field emission distribution by in-situ Ar gas conditioning process was studied.

Published in:

Vacuum Nanoelectronics Conference (IVNC), 2011 24th International

Date of Conference:

18-22 July 2011