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Triple-gated Spindt-type FEA for image sensor with HARP target

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6 Author(s)
Y. Honda ; NHK Science & Technology Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, Japan ; Y. Takiguchi ; N. Egami ; M. Nanba
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A new electrostatic focusing field emitter for FEA - HARP (field emitter array - high-gain avalanche rushing amorphous photoconductor) image sensor was designed. Simulation results showed that the new emitter can improve the emission current and suppress the electrons bombarding the insulator, a problem that degrades the reliability of the FEA.

Published in:

2011 24th International Vacuum Nanoelectronics Conference

Date of Conference:

18-22 July 2011