Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

Passivation of InP-based HBTs for high bit rate circuit applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
9 Author(s)
Caffin, D. ; Lab. de Bagneux, CNET, Bagneux, France ; Bricard, L. ; Courant, J.L. ; How Kee Chun, L.S.
more authors

We have studied different materials (silicon nitride, silicon oxide, polyimide) for passivating InP-based HBTs, and their influence on the device electrical performances. Polyimide was found to induce the least degradation after passivation. A double heterojunction InP/InGaAs HBT fabrication process, including polyimide passivation and planarization, has been assembled, allowing us to realize high bit-rate circuits, such as a 36 Gb/s 2:1 multiplexer

Published in:

Indium Phosphide and Related Materials, 1997., International Conference on

Date of Conference:

11-15 May 1997