By Topic

Butt-coupled waveguide-modulators by low temperature embedded CBE regrowth for high speed modulation (42 GHz) or large extinction ratio (>50 db)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Alexandre, F. ; Lab. de Bagneux, CNET, Bagneux, France ; Jahan, D. ; Devaux, F. ; Ougazzaden, A.
more authors

The monolithic integration of optical waveguides with various active photonic devices is an essential step towards the fabrication of complex photonic integrated circuits (PICs). This integration requires on the same substrate side by side planar areas of usually thick (around 3 μm) InP/GaInAsP/InP double heterostructure (DH) with wide differences in bandgap and doping level between the low loss waveguide and the active device. We demonstrate that selective-area chemical beam epitaxy (SA-CBE) offers several interesting features for this application. We have successfully applied this technique to the selectively embedded regrowth of a waveguide butt-coupled to multi-quantum well (MQW) electroabsorption (EA) modulators. Two integrated modules have been fabricated and characterized: a photonic circuit including two modulators optically connected through a waveguide to generate short optical pulses with a large extinction ratio (>50 dB) for optical temporal multiplexing up to 80 Gb/s; and a very short (L=50 μm) discrete modulator with waveguides integrated on both ends showing high modulation bandwidth (42 GHz)

Published in:

Indium Phosphide and Related Materials, 1997., International Conference on

Date of Conference:

11-15 May 1997