Stripe direction dependence in selective area growth of InGaAsP using TBP and TBA

We employ tertiarybutyl-phosphine (TBP) and tertiarybutylarsine (TBA) as phosphorous and arsenic sources, respectively, for SAG of InP and InGaAsP. These sources enable us to maintain a relatively low V/III ratio of /spl sim/20 even under reduced pressure (76 Torr) MOCVD growth at 640/spl deg/C. With the growth rates which are not extremely low compared to conventional growth, the growth surface profile by SAG using the [110]-stripe is studied and their ultimate limit is presented. Also, the alternative [11_0] direction is investigated and the control of the growth over the SiN/sub x/ adjacent to the selectively opened area is presented. Also, based on the experimental observations, the mechanism leading to the differences in these directions are presented.