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Stripe direction dependence in selective area growth of InGaAsP using TBP and TBA

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3 Author(s)
In Kim ; Dept. of Electr. Eng./Electrophys., Univ. of Southern California, Los Angeles, CA, USA ; Won-Jin Choi ; P. D. Dapkus

We employ tertiarybutyl-phosphine (TBP) and tertiarybutylarsine (TBA) as phosphorous and arsenic sources, respectively, for SAG of InP and InGaAsP. These sources enable us to maintain a relatively low V/III ratio of ~20 even under reduced pressure (76 Torr) MOCVD growth at 640°C. With the growth rates which are not extremely low compared to conventional growth, the growth surface profile by SAG using the [110]-stripe is studied and their ultimate limit is presented. Also, the alternative [11_0] direction is investigated and the control of the growth over the SiNx adjacent to the selectively opened area is presented. Also, based on the experimental observations, the mechanism leading to the differences in these directions are presented

Published in:

Indium Phosphide and Related Materials, 1997., International Conference on

Date of Conference:

11-15 May 1997