Optimization of InGaAs/InAlAs/InP HEMT gate recess process for high frequency and high power applications

We have optimized the gate recess etch process for our W-band high power 0.15 /spl mu/m gate length InGaAs/InAlAs/InP HEMTs. A 640 /spl mu/m single-stage MMIC amplifier built on this device demonstrated an output power of 130 mW with 13% power added efficiency at 94 GHz. This results represent the best output power fixture data to date measured from a single InP-based HEMT MMIC at this frequency.