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Semi-analytical analysis for optimization of 0.1-μm InGaAs-channel MODFETs with emphasis on on-state breakdown and reliability

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7 Author(s)
H. Rohdin ; Hewlett-Packard Labs., Palo Alto, CA, USA ; Chung-Yi Su ; N. Moll ; A. Wakita
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We have measured and analyzed the bias limitations of our 0.1-μm In53Ga47As-channel MODFETs. A semi-analytical model allows us to correlate a major degradation mechanism, the increase in drain resistance to impact ionization in the narrow-bandgap channel. We find, as others have, that this mechanism also determines the on-state breakdown voltage BVDS(on) , and thus limits the operating regime. The modeling predicts the shape of BVDS(on) vs. ID and shows that the off-state breakdown voltage is irrelevant for practical load-lines. BVDS(on)(ID) deviates markedly from a constant power locus. In fact, it tends to have a flat minimum BVDS (on,min) (corresponding to maximum impact ionization current) near the ID of maximum transconductance. BVDS (on,min) becomes the most significant measure of FET breakdown. Most of our device variations have tended to produce a constant-power trade-off of BVDS(on,min) with its associated ID, in contrast to the non-constant-power locus of BVDS(on)(ID) The model predicts both trends well

Published in:

Indium Phosphide and Related Materials, 1997., International Conference on

Date of Conference:

11-15 May 1997