Millimeter-Wave SiGe HBT High Voltage/High Power Architecture Implementation

This letter discusses the first implementation of the high voltage/high power (HiVP) architecture in silicon at millimeter-wave frequencies. Implemented in a commercial 0.12 μm SiGe HBT BiCMOS process, P
_SAT
= 19.0 dBm with a PAE of 11.47% in an area of 0.21 mm
²
, have been measured at center frequency 30 GHz. This architecture provides a new tool for silicon designers to achieve high output power, customizable bias, and a way to minimize, if not eliminate, matching circuitry at millimeter-wave frequencies. Simulation, layout, fabrication, and measurement results are presented in this letter.