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This letter explores source-side injection in Schottky barrier metal-oxide-semiconductor (MOS) devices. Unlike drain-side injection in conventional MOS devices, a source-side lucky electron model predicts the specific source-side injection in Schottky barrier MOS devices. The source-side electric field is derived from the solutions of 2-D Poisson's equations. The conformal-mapping method is used to estimate the gate electrode contribution to determine the source-side injected probability. 2-D device simulations confirm the agreements between the analytical models and the numerical results. This study provides a physical understanding of enhanced source-side injection in new Schottky barrier nonvolatile memory.