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Ultra-low-voltage operation: Device perspective

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1 Author(s)
Hiramoto, T. ; Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan

The challenges for ultra-low-voltage operation are reviewed from the device side. The degradations of transistor variability and subthreshold swing are the main obstacles for the ultra-low-voltage operation. A new transistor structure with fully-depleted channel is discussed as a possible solution.

Published in:

Low Power Electronics and Design (ISLPED) 2011 International Symposium on

Date of Conference:

1-3 Aug. 2011