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Diffusion behavior and mechanism of co-sputtering metals as bonding materials for 3D IC interconnects during annealing treatment

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3 Author(s)
Hsu, S.Y. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Shih, J.Y. ; Chen, K.N.

A diffusion behavior was observed for co-sputtered metals during thermal treatment, while these metals were fabricated as bonding mediums in 3D IC applications. This paper reports and discusses the mechanical behavior of co-sputtering metals before and after annealing. In addition, co-sputtering metal bonding seems to be an option for bonding technology based on their excellent bonding results.

Published in:

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Date of Conference:

21-24 June 2011