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Annealing effect on hydrothermally grown ZnO thin-film transistors

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5 Author(s)
Jyh-Liang Wang ; Dept. of Electron. Eng., Ming Chi Univ. of Technol., Taipei, Taiwan ; Tsang-Yen Hsieh ; Chuan-Chou Hwang ; Der-Chi Shye
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High-performance zinc oxide (ZnO) thin-film transistors (TFTs) with location-controlled lateral grain were fabricated by low-temperature hydrothermal method. The ZnO active channel was laterally grown with aluminum-doped ZnO (AZO) seed layer underneath the Ti/Pt film. The annealed ZnO TFTs reveal high-quality ZnO films with the compensated structural defects in the channel region compared to the unannealed devices. Thus, the superior device performances (i.e. the excellent μFE of 9.07 cm2/V·s, high on/off current ratio of ~ 106, and low gate leakage current of <; 1 nA) of hydrothermal growth (HTG) ZnO TFTs can be achieved after annealing.

Published in:

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Date of Conference:

21-24 June 2011

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