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Multilevel resistance switching characteristics of the thin FeOx-transition layer were studies by controlling the maximum current compliance during set process. It is obtained that the LRS is mainly influenced by the compliance current value, which is nearly independent to the HRS. Moreover, statistics of set and reset electrical parameters show that the possible switching process is localized, and also, the multiple resistive switching states in the TiN/SiO2/FeOx/Fe memristor could be approved.
Date of Conference: 21-24 June 2011