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Tunable resistance switching characteristics in a thin FeOx-transition layer part I: Compliance current controlling

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9 Author(s)
Yao-Feng Chang ; Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan ; Li-Wei Feng ; Chih-Wen Huang ; Guo-Yuan Wu
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Multilevel resistance switching characteristics of the thin FeOx-transition layer were studies by controlling the maximum current compliance during set process. It is obtained that the LRS is mainly influenced by the compliance current value, which is nearly independent to the HRS. Moreover, statistics of set and reset electrical parameters show that the possible switching process is localized, and also, the multiple resistive switching states in the TiN/SiO2/FeOx/Fe memristor could be approved.

Published in:

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Date of Conference:

21-24 June 2011