Tunable resistance switching characteristics in a thin FeOx-transition layer part I: Compliance current controlling

Multilevel resistance switching characteristics of the thin FeO
_x
-transition layer were studies by controlling the maximum current compliance during set process. It is obtained that the LRS is mainly influenced by the compliance current value, which is nearly independent to the HRS. Moreover, statistics of set and reset electrical parameters show that the possible switching process is localized, and also, the multiple resistive switching states in the TiN/SiO
₂
/FeO
_x
/Fe memristor could be approved.