Cart (Loading....) | Create Account
Close category search window

Realization of InGaN solar cells with InGaN/GaN superlattice absorption layers by metalorganic vapor phase epitaxy (MOVPE)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Tsai, Chia-Lung ; Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan ; Zhong-Fan Xu ; Yu-Sheng Lee ; Gong-Cheng Fan

In this study, we report on the realization of InGaN solar cells with InGaN/GaN superlattice (SL) absorption layers by low-pressure metalorganic vapor phase epitaxy (MOVPE). High-resolution X-ray diffraction and photoluminescence analyses show that solar cells with an SL have improved crystalline quality and can accommodate more indium content than those using an InGaN layer. Using SLs of a reasonable crystalline quality, these fabricated solar cells exhibit improved photovoltaic characteristics.

Published in:

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Date of Conference:

21-24 June 2011

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.