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In this paper, characteristics of Schottky Barrier (SB) NOR Flash memory devices are studied through simulation. SB Flash cell adopts source-side hot electron and hole injection (SSHEI/SSHHI) in programming and erasing, respectively, and higher P/E efficiency can be achieved as compared with conventional NOR Flash devices. We also show that the distribution of injected carriers in SB cells are tighter and more localized near the source or drain side, while reverse read is only slightly altered after programming. This represents a potential merit in scaled NROM devices which demands the elimination of interference between the two bits contained in a single cell.