Referenced Items are not available for this document.
Electrostatic discharge (ESD) robustness of the Sub-10 nm diameter gate-all-around nanowire field-effect transistor (NW FET) was characterized and compared with sub 65nm MOS devices and FinFETs. Failure mechanisms of NW FETs subject to ESD stresses are investigated by DC current-voltage measurements carried out before and after stressing the devices with ESD equivalent pulses generated from the transmission line pulsing (TLP) tester.
Published in:
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Date of Conference: 21-24 June 2011
- Page(s):
- 1 - 2
- ISSN :
- 2159-3523
- E-ISBN :
- 978-1-4577-0377-5
- Print ISBN:
- 978-1-4577-0379-9
- INSPEC Accession Number:
- 12182599
- Conference Location :
- Tao-Yuan
- Digital Object Identifier :
- 10.1109/INEC.2011.5991616
- Product Type:
- Conference Publications
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