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4-times faster rising VPASS (10V), 15% lower power VPGM (20V), wide output voltage range voltage generator system for 4-times faster 3D-integrated solid-state drives

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2 Author(s)
Hatanaka, T. ; Univ. of Tokyo, Tokyo, Japan ; Takeuchi, K.

A wide output voltage, VOUT, range from 10V to 20V voltage generator system is proposed for the 3D-integrated NAND flash Solid-State Drives, SSDs. The circuits are fabricated with the smart mix and match of the 0.18um standard CMOS, the low voltage and high voltage NAND flash memory technologies. The two-stage boost converter is proposed for the program pass voltage, VPASS, in the lower VOUT, 10V, and the heavy load capacitance, COUT, condition. The measured rising time is four times shorter than the conventional single-stage boost converter. In addition, the constant current boosting scheme is proposed for the program voltage, VPGM, in the higher VOUT, 20V, and the light COUT condition. The power consumption decreases by 15%. As a result, the SSD performance improves by 4 times.

Published in:

VLSI Circuits (VLSIC), 2011 Symposium on

Date of Conference:

15-17 June 2011

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