By Topic

Highly uniform step and terrace structures on SiC(0001) surfaces

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Sun, J. ; Department of Physics and Material Science Program, University of New Hampshire, Durham, NH, USA ; Hannon, J.B. ; Tromp, R.M. ; Pohl, K.

Highly uniform step and termination structures on 4H- and 6H-SiC(0001) surfaces have been prepared via moderate annealing in disilane. Atomic force microscopy and dark-field low-energy electron microscopy imaging indicate single-phase terminations separated solely by half-unit-cell-height steps, driven by stacking fault energy. The atomic structure of 4H-SiC(0001)- \surd 3 \times \surd 3R30 ^{\circ} -Si has been determined quantitatively by nanospot low-energy electron diffraction. The topmost stacking fault at the 4H surface has been found to be between the second and third bilayers.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:55 ,  Issue: 4 )