Referenced Items are not available for this document.
In this letter, the results obtained with a finite termination by argon ion implantation at the periphery of GaN Schottky barrier diodes are reported. It is demonstrated that the implant region width required to obtain the ideal plane parallel breakdown voltage of 1700 V is 50 μm.
Published in:
Electron Device Letters, IEEE
(Volume:32
,
Issue:
10
)
Date of Publication: Oct. 2011
- Page(s):
- 1361 - 1363
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 12245388
- Digital Object Identifier :
- 10.1109/LED.2011.2162221
- Product Type:
- Journals & Magazines
- Date of Publication :
- 18 August 2011
- Date of Current Version :
- 26 September 2011
- Issue Date :
- Oct. 2011
- Sponsored by :
- IEEE Electron Devices Society
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