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A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si

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12 Author(s)
Das, J. ; Interuniv. Microelectron. Center (IMEC), Leuven, Belgium ; Everts, J. ; Van den Keybus, J. ; Van Hove, M.
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III-Nitride materials are very promising to be used in next-generation high-frequency power switching applications. In this letter, we demonstrate the performance of normally off AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs) using a boost-converter circuit. The figures of merit of our large (57.6-mm gate width) GaN transistor are presented: RON * QG of 2.5 Ω·nC is obtained at VDS = 140 V. The switching performance of the GaN DHFET is studied in a dedicated high-frequency boost converter: both the switching times and power losses are characterized. We show converter efficiency values up to 96.1% at 500 kHz and 93.9% at 850 kHz at output power of 100 W.

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Electron Device Letters, IEEE  (Volume:32 ,  Issue: 10 )