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Optimal materials and process conditions of functional layers for piezoelectric MEMS process at high temperature

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4 Author(s)
Dong-Yeon Lee ; Sch. of Mech. Eng., Yeungnam Univ., Gyeongsan, South Korea ; Jaesool Shim ; Tae Song Kim ; Jae Hong Park

Pb(Zr0.52Ti0.48)O3 (PZT) thick film-based micro-transducers demonstrate excellent piezoelectric performances. However, its powder-based film requires very high sintering temperature to obtain high density and good electromechanical properties of the active film. High processing temperature enables inter-diffusion or reaction between PZT active materials and Si-based substrate to result in device failure via volatilisation of PbO especially over 800°C. Therefore the preventive solution to this problem should be considered in fabricating silicon-based piezoelectric microdevices for the better performance. In this research, compatibility in the interface stability and adhesion between the layers of the overall integrated piezoelectric thick-film devices were thoroughly investigated for the successful application of the process at high temperature. The Pt (or PtOx)/TiO2/SiNx/Si substrate represented the best interfacial properties among various combinations of structural substrates, so this structure is highly recommended to integrated piezoelectric thick-film microelectromechanical system devices.

Published in:

Micro & Nano Letters, IET  (Volume:6 ,  Issue: 7 )