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BN/Graphene/BN Transistors for RF Applications

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7 Author(s)
Han Wang ; Massachusetts Institute of Technology, Cambridge, MA, USA ; Thiti Taychatanapat ; Allen Hsu ; Kenji Watanabe
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In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to enable the next generation of high-frequency graphene RF electronics.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 9 )