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Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate

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6 Author(s)
Medjdoub, F. ; IEMN/CNRS, Villeneuve d''Ascq, France ; Waldhoff, N. ; Zegaoui, M. ; Grimbert, B.
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Microwave noise performance of state-of-the-art AIN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high power millimeter-wave (mmW) applications. A maximum output current density of about 2 A/mm, together with a low gate leakage current, and a record GaN-on-Si extrinsic transconductance above 600 mS/mm are demonstrated. The current gain cutoff frequency fT and the maximum oscillation frequency fmax were 85 and 103 GHz, respectively, with a 0.16-μm gate length. At VDS = 4 V, the device exhibits a minimum noise figure (NFmin) of 1 dB (1.8 dB) with an associated gain (GA) of 12 dB (10 dB) at 10 GHz (18 GHz) favorably comparable to the best reported GaN-on-Si HEMTs. These results show that AIN/GaN HEMTs grown on silicon substrate are promising for the integration of cost effective, low noise, and high power mmW amplifiers.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 9 )