By Topic

Controllable Filament With Electric Field Engineering for Resistive Switching Uniformity

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Qing-Qing Sun ; Dept. of Microelectron., Fudan Univ., Shanghai, China ; Jing-Jing Gu ; Lin Chen ; Zhou, Peng
more authors

Variations in SET and RESET voltages during resistive switching cause problems for transition-metal-oxide-based resistive memory applications. The random circuit breaker network model has illustrated that the random formation and rupture of conducting filaments result in this instability. A solution consisting of a carefully designed electric field redistribution is proposed to minimize these variations. This switching behavior occurs in an ultrathin Al2O3 film very near to the anode rather than occurring in a random distribution over a large region. The SET voltage distribution is narrowed by a factor of seven, and consequently, the RESET voltage distribution is confined near a fixed value.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 9 )