Referenced Items are not available for this document.
Variations in SET and RESET voltages during resistive switching cause problems for transition-metal-oxide-based resistive memory applications. The random circuit breaker network model has illustrated that the random formation and rupture of conducting filaments result in this instability. A solution consisting of a carefully designed electric field redistribution is proposed to minimize these variations. This switching behavior occurs in an ultrathin Al2O3 film very near to the anode rather than occurring in a random distribution over a large region. The SET voltage distribution is narrowed by a factor of seven, and consequently, the RESET voltage distribution is confined near a fixed value.
Published in:
Electron Device Letters, IEEE
(Volume:32
,
Issue:
9
)
Date of Publication: Sept. 2011
- Page(s):
- 1167 - 1169
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 12206637
- Digital Object Identifier :
- 10.1109/LED.2011.2159770
- Product Type:
- Journals & Magazines
- Date of Publication :
- 01 August 2011
- Date of Current Version :
- 22 August 2011
- Issue Date :
- Sept. 2011
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
