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Self-Aligned Coplanar a-IGZO TFTs and Application to High-Speed Circuits

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4 Author(s)
Dong Han Kang ; Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea ; In Kang ; Sang Hyun Ryu ; Jin Jang

We report a self-aligned coplanar amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) using an a-IGZO/SiO2 stack layer. From the channel-length dependence of the total resistance for the TFTs, the channel and parasitic resistances were found to be 8.4 kΩ/μm and 9.7 kΩ/sq, respectively. The fabricated a-IGZO TFT exhibits field-effect mobility of 23.3 cm2/V ·s, threshold voltage of 3.6 V, and gate voltage swing of 203 mV/dec. A 23-stage ring oscillator made of the self-aligned TFTs exhibits a propagation delay time of 17 ns/stage at a supply voltage of 22 V.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 10 )