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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:32 Issue:10 Help

Transparent \hbox {SnO}_{2} Nanowire Electric-Double-Layer Transistors With Different Antimony Doping Levels

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4 Author(s)
Huixuan Liu ; Ningbo Inst. of Mater. Technol. & Eng., Chinese Acad. of Sci., Ningbo, China ; Jia Sun ; Ruijie Xuan ; Qing Wan

Transparent SnO2 nanowire electric-double-layer (EDL) transistors with different antimony (Sb) doping levels are fabricated on transparent conducting glass substrates. The threshold voltage (Vth) can be effectively modulated by in situ Sb doping. Both enhancement mode and depletion mode are realized, and the Vth shift of the nanowire EDL transistors is estimated to be 0.41 V. All nanowire EDL transistors show good electrical characteristics with a high field-effect mobility (>; 100 cm2/V · s), a high drain-current on/off ratio (>; 8 × 104), and a small subthreshold slope (<; 200 mV/dec). These transparent nanowire EDL transistors are promising for “see- through” nanoscale sensors.

Published in:
Electron Device Letters, IEEE  (Volume:32 ,  Issue: 10 )

Date of Publication: Oct. 2011

Page(s):
1358 - 1360
ISSN :
0741-3106
INSPEC Accession Number:
12245369
Digital Object Identifier :
10.1109/LED.2011.2161664
Product Type:
Journals & Magazines
Date of Publication :
28 July 2011
Date of Current Version :
26 September 2011
Issue Date :
Oct. 2011
Sponsored by :
IEEE Electron Devices Society

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