Transparent $\hbox{SnO}_{2}$ Nanowire Electric-Double-Layer Transistors With Different Antimony Doping Levels

Transparent SnO
₂
nanowire electric-double-layer (EDL) transistors with different antimony (Sb) doping levels are fabricated on transparent conducting glass substrates. The threshold voltage (
V
_th
) can be effectively modulated by in situ Sb doping. Both enhancement mode and depletion mode are realized, and the
V
_th
shift of the nanowire EDL transistors is estimated to be 0.41 V. All nanowire EDL transistors show good electrical characteristics with a high field-effect mobility (>; 100 cm
²
/V · s), a high drain-current on/off ratio (>; 8 × 10
⁴
), and a small subthreshold slope (<; 200 mV/dec). These transparent nanowire EDL transistors are promising for “see- through” nanoscale sensors.