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Design of a ternary static memory cell using carbon nanotube-based transistors

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2 Author(s)
You, K. ; Dept. of Electr. Eng., Bucknell Univ., Lewisburg, PA, USA ; Nepal, K.

In this Letter, the authors investigate the use of carbon nanotube-based field effect transistors (CNTFET) for the design of a ternary static random access memory (SRAM). The authors consider two designs - one using 8 transistors and the other using 14 transistors. Using circuit simulation models for CNTFETs, the authors show that both designs produce a functional ternary SRAM cell. The authors also measure the delay and power of the read-and-write operation of the ternary SRAM created using both models and show that the delays are comparable.

Published in:

Micro & Nano Letters, IET  (Volume:6 ,  Issue: 6 )

Date of Publication:

June 2011

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