By Topic

Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Haiou Li ; School of Information and Communication, Guilin University of Electronic Technology, Guilin, China ; Zhihong Feng ; Chak Wah Tang ; Kei May Lau

Metamorphic AlInAs/GaInAs high-electron-mobility transistors (HEMTs) of 150-nm gate length with very good device performance have been grown by metal-organic chemical vapor deposition, with the introduction of an effective multistage buffering scheme. By using a combined optical and e-beam photolithography technology, submicrometer mHEMT devices have been achieved. The devices exhibit good dc and RF performance. The maximum transconductance was 1074 mS/mm. The nonalloyed ohmic contact resistance Rc was as low as 0.02 Ω·mm. The unity current gain cutoff frequency (fT) and the maximum oscillation frequency (fmax) were 279 and 231 GHz, respectively. This device has the highest fT yet reported for 150-nm gate-length HEMTs. Also, an input capacitance to gate-drain feedback capacitance ratio Cgs/Cgd of 3.2 is obtained in the device.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 9 )