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Graphene nanoribbon crossbar nanomesh

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4 Author(s)
K. M. M. Habib ; Department of Electrical Engineering, University of California Riverside, 92506 U.S.A. ; A. Khitun ; A. A. Balandin ; R. K. Lake

Graphene nanoribbon crossbars exhibit negative differential resistance. This nonlinear current-voltage response can be exploited in a nanomesh geometry for high-density logic or memory. A 2xN crossbar array can store 3N states. Proof-of-principle of a high functional density architecture exploiting the non-linear dynamics of graphene nanoribbon crossbars in a nanomesh geometry is demonstrated.

Published in:

2011 IEEE/ACM International Symposium on Nanoscale Architectures

Date of Conference:

8-9 June 2011