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Inexact computing for ultra low-power nanometer digital circuit design

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2 Author(s)
Jaeyoon Kim ; Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA ; Tiwari, S.

We elaborated a new ultra low-power nanometer circuit design methodology by introducing statistical fluctuations in advanced technology nodes as noise sources causing computational errors. The modeling is performed on sub-50 nm technology node to create a statistical performance metric. The relationship between the probability of error and the circuit noise for a variety of different configurations and of circuit topologies is explored. Input-coupled noise has the dominant effect in terms of error and is analyzed through AC and high-frequency properties of the inverter transfer characteristics. Gate-level implementation of the probabilistic CMOS logic is validated with circuit simulations using a commercial 45-nm SOI CMOS process technology. Using a 32-bit adder where voltages can be scaled from MSB to LSB as an example, simulation results show the power of the technique. A calculation error of 10-6, a number quite appropriate for many computational tasks, occurs with a total power reduction of more than 40 %.

Published in:

Nanoscale Architectures (NANOARCH), 2011 IEEE/ACM International Symposium on

Date of Conference:

8-9 June 2011