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Comparison of Junctionless and Conventional Trigate Transistors With L_{g} Down to 26 nm

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8 Author(s)
Rios, R. ; Technol. & Manuf. Group, Intel Corp., Hillsboro, OR, USA ; Cappellani, A. ; Armstrong, M. ; Budrevich, A.
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Junctionless accumulation-mode (JAM) devices with channel lengths Lg down to 26 nm were fabricated on a trigate process and compared to conventional inversion-mode (IM) devices. This letter represents the first experimental comparison of short-channel JAM-to-IM devices at matched off-state leakage (Ioff) . The JAM devices show better channel mobility (when moderately doped) and lower gate capacitance than the IM control counterparts at matched Ioff. However, the JAM devices also show reduced gate control and degraded short-channel characteristics. The observed degraded behavior of JAM relative to IM is explained with the aid of device simulations and a simple analytic model of the channel charge.

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Electron Device Letters, IEEE  (Volume:32 ,  Issue: 9 )