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A Guideline for the Optimum Fin Width Considering Hot-Carrier and NBTI Degradation in MuGFETs

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4 Author(s)
Dong Hun Lee ; Dept. of Electron. Eng., Univ. of Incheon, Incheon, South Korea ; Seung Min Lee ; Chong Gun Yu ; Jong Tae Park

Considering both hot-carrier and negative-bias-temperature-instability (NBTI) degradations, a guideline for the optimum fin width in p-channel multiple-gate MOSFETs (p-MuGFETs) has been suggested. From the different dependences of the fin width on both hot-carrier and NBTI degradations in p-MuGFETs, the optimum fin width has been extracted empirically to maximize the device lifetime. The optimum fin width increases as the stress temperature increases. When the fin width is narrower than the optimum fin width, the device lifetime is dominantly determined by NBTI degradation. However, when the fin width is wider than the optimum fin width, the device lifetime is determined by hot-carrier degradation. Considering both hot-carrier and NBTI degradations, the tradeoff between fin width and fin number has been discussed.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 9 )