By Topic

Characterization of a single port aluminum nitride tuning fork

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Vigevani, G. ; Berkeley Sensor & Actuator Center, Univ. of California, Berkeley, CA, USA ; Przybyla, R.J. ; Ting-Ta Yen ; Chih-Ming Lin
more authors

In this study the characterization of an aluminum nitride (A1N) double ended tuning fork (DETF) fabricated on a layer of silicon dioxide (SiO2) is presented. The positive temperature coefficients of SiO2 are used to achieve zero TCF for radio frequency (RF) Lamb wave resonators. This paper shows the possibility to integrate temperature compensated Lamb wave resonators with DETF-based devices on a single chip. The DETF resonates in a quasi-in-plane mode shape with a Q-factor of 578 in air and 3028 in vacuum. Through a laser Doppler velocity (LDV) measurement we also show that, due to the biomorph nature of the structure and the angle of the side walls, the motion of each tine of the DETF is a combination of in-plane bending, out-of-plane bending and torsional motion around the beam main axis.

Published in:

Ultrasonics Symposium (IUS), 2010 IEEE

Date of Conference:

11-14 Oct. 2010