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Recent work has shown that laser annealing may have advantages over conventional RTP for nickel silicidation formation, such as lower leakage and better device performance. However, there are a number of requirements that must be met by any millisecond annealing tool to successfully bring this process to a high volume manufacturing environment. Ultratech's new low-temperature LSA system is designed to meet these requirements for middle-of-line processes such as nickel silicidation. Specifically, this system meets the requirements of within-die temperature uniformity, layout-independent processing, and closed-loop temperature control. Supporting data is presented for each of these requirements. Characterization data on blanket NiPt wafers is also presented which shows that a large step size can be used during the rastoring of the laser beam over across the wafer, enabling a production-worthy throughput of 70wph to be achieved by LSA.
Date of Conference: 16-18 May 2011