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In this work, we report on ZrO2 position effect of ALD HfZrOx gate dielectric with a La2O3 capping layer for gate-first flow. The basic electrical characteristics of devices were compared with different ZrO2 position in HfZrOx dielectric. Experimental results show : (1) Under top La2O3 capping layer for n-type Metal-Oxide-Silicon capacitor (nMOSCAP) device, ZrO2 position on both of top and bottom in HfZrOx shows higher leakage (>;x5) current and Vfb shift (-0.18V) to band edge than HfO2 dielectric. (2) For the top La2O3 cap device, ZrO2 addition into ALD HfO2 can have significant shift on Jg and Vfb. Bottom La2O3 capping position stack has higher Jg (>;x4) and larger Vfb shift (-0.15V) than the top La2O3 cap position for nMOSCAP device.
Date of Conference: 16-18 May 2011