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Error correction for finite semiconductor resistivity in Kelvin test structures

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3 Author(s)
A. S. Holland ; R. Melbourne Inst. of Technol., Vic., Australia ; G. K. Reeves ; H. B. Harrison

The Cross Bridge Kelvin Resistor structure is a commonly used test structure for the extraction of the specific contact resistance of ohmic contacts. Analyses using this structure are generally based on a two-dimensional model which assumes zero voltage drop in the semiconductor layer (in the direction normal to the plane of the contact). This paper uses a three-dimensional analysis to show the magnitude of the errors introduced by this assumption, and illustrates the conditions under which a three-dimensional analysis should be used

Published in:

Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on

Date of Conference:

17-20 Mar 1997