Sub 0.5 /spl mu/m TCP metal etching in the ASTC

Summary form only given, as follows. The IBM Advanced Technology Center (ASTC) has alliances with the Siemens Corporation and Toshiba for 64M and 256M DRAM process development, state of the art equipment in a state of the art facility, has allowed for quick development of processes for these technologies. High density DRAM technologies have moved metal etching into the sub 0.5 /spl mu/m regime. These smaller geometries place demanding requirements on metal etch processing. With an increase in wafer size and pattern density, it becomes increasingly difficult to produce uniform profiles across a wafer. Unlike other films, metal etching requires post etch treatment to prevent the onset of corrosion. In a manufacturing environment, low cost of ownership and good tool reliability are essential. This paper discusses sub 0.5 /spl mu/m aluminum etching in a 200 mm LAM TCP 9600 Etch Chamber and post etch wafer treatment. Chemistries, powers, and pressures have been optimized to produce higher selectivities (<5:1) to photoresist, less RIE lag (<15%), and more uniform profiles across a wafer, better particle control and the extended life of etch tool hardware with these parameter optimizations are also discussed.