Scheduled System Maintenance:
On Monday, April 27th, IEEE Xplore will undergo scheduled maintenance from 1:00 PM - 3:00 PM ET (17:00 - 19:00 UTC). No interruption in service is anticipated.
By Topic

Development of a manufacturable low pressure ROXNOX oxidation process [for CMOS technology]

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Bilotta, S. ; Digital Equipment Corp., Hudson, MA, USA ; Proctor, D.

Development work was completed on a ROXNOX oxidation to harden the gate oxide against hot carriers. Although device lifetime criteria were met and exceeded, there were serious manufacturing problems which remained. These problems included nonuniform oxide, high particle counts and excessive equipment failures due to the high temperature required for the ROXNOX oxidation process. A series of equipment and process solutions resulted in a factor of 2 film uniformity improvement, a factor of 2 reduction in average particle counts and a reduction of the occurrence and magnitude of particle spikes as well as improvement in equipment availability by 20%

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop. 1994 IEEE/SEMI

Date of Conference:

14-16 Nov 1994