By Topic

Control of turn-on voltage in GaN Schottky barrier diode using Zr/Al/Mo/Au metal stack

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Tokuda, H. ; Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan ; Watanabe, F. ; Syahiman, A. ; Kuzuhara, M.
more authors

A GaN Schottky diode using Zr/Al/Mo/Au metal stack for Schottky contact has been newly developed. Turn-on (Von) and breakdown voltages (Vbr) are controllable with varying the annealing temperature. The fabricated diode shows the values Von, series resistance (Rs), capacitance (C0), and Vbr to be 0.42 V, 4.2 Ω, 1.0 pF, and 24 V, respectively. These values indicate that 85% conversion efficiency is expected at 5.8 GHz in the rectenna circuit.

Published in:

Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications (IMWS), 2011 IEEE MTT-S International

Date of Conference:

12-13 May 2011