Referenced Items are not available for this document.
This study improved the thermal processing stability of Si-based coplanar waveguides (CPW) through Ar ion implantation with rapid thermal annealing (RTA). Ar ion implantation damaged the surface layer of the high-resistivity silicon substrate, which decreased attenuation of the CPW line. However, the damaged layer recrystallized during a high temperature process, which caused thermal processing instability. A RTA process was performed to retard the epitaxial regrowth from the substrate, this improved thermal processing stability and decreased dc-voltage dependence of the attenuation of the CPW line. These improved properties were found to be due to the RTA process retaining more bulk traps within the damaged layer.
Published in:
Microwave and Wireless Components Letters, IEEE
(Volume:21
,
Issue:
7
)
Date of Publication: July 2011
- Page(s):
- 365 - 367
- ISSN :
- 1531-1309
- INSPEC Accession Number:
- 12141552
- Digital Object Identifier :
- 10.1109/LMWC.2011.2151850
- Product Type:
- Journals & Magazines
- Date of Publication :
- 09 June 2011
- Date of Current Version :
- 04 July 2011
- Issue Date :
- July 2011
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
