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Achieving low-power dissipation in modulators for 10.6 μm is a challenge, We confirm the previously predicted modulation characteristics of the integrated mirror optical switch based on the resonant plasma effect in highly doped semiconductors. At 12 V and 14 mW, an external modulation depth of 18% was measured. The proposed design limited the clocking frequency to a few megahertz. The achieved power dissipation is about three orders of magnitude less than the commercially available electrooptical modulators operating at these wavelengths.